| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which mobility of the electrons of an n-channel MOSFET is improved and current driving ability is improved, and to provide a method for manufacturing the device. SOLUTION: The semiconductor device is provided with the n-channel MOSFET and a p-channel MOSFET formed on a silicon substrate 1. The semiconductor device is provided with a nitride film 14 having true stress of tension covering the n-channel MOSFET, and a nitride film 16 having true stress of compression covering the p-channel MOSFET.
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