Semiconductor device has oxide and nitride liners that are sequentially formed along surface of trench and dielectric layer that fills trench
摘要
<p>An isolation layer (170) that is formed in a trench has an oxide liner and a nitride liner that are sequentially formed along surface of trench and dielectric layer that fills the trench. The trench has gate and drain/source regions having thickness less than or equal to that of a semiconductor layer. An independent claim is included for semiconductor device manufacturing method.</p>
