发明名称 |
Method of forming insulation layer in semiconductor devices for controlling the composition and the doping concentration |
摘要 |
The present invention relates to a method of forming an insulating film in a semiconductor device by which the composition and the doping concentration of oxide are controlled using an atomic layer deposition method. In case of silicon oxide, a thermal oxidization process and a deposition process are sequentially performed to form an oxide film having a good interface characteristic and the deposition speed. On the other hand, in case of depositing an oxide film, an oxynitride film and a metal oxide film, the pulse construction and the supply time of a source and radical are adjusted to form an optimum oxide film having a good interface characteristic.
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申请公布号 |
US2003040196(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010984233 |
申请日期 |
2001.10.29 |
申请人 |
LIM JUNG WOOK;SONG YOUNG JOO;SHIM KYU HWAN;KANG JIN YEONG |
发明人 |
LIM JUNG WOOK;SONG YOUNG JOO;SHIM KYU HWAN;KANG JIN YEONG |
分类号 |
H01L21/314;H01L21/316;(IPC1-7):H01L21/469;H01L21/31 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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