SEMICONDUCTOR PROCESSING SYSTEM

摘要

A semiconductor processing system, comprising interstitial structures (37A, 37B) disposed between an atmospheric pressure atmosphere inlet side transfer chamber (32) and a vacuum atmosphere common transfer chamber (36) and having transfer passages (38A, 38B) formed so as to allow a processed substrate (W) to pass therein, the transfer passages further comprising detachably connected first buffer chambers (70), intermediate transfer chambers (72), and a second buffer chambers (74), wherein additional processing devices (110, 110A) are detachably connected to the intermediate transfer chambers, and the interstitial structures are selectively installed in either of the first state where the additional processing device (110) is set so as to perform vacuum processing and the first buffer chambers (70) are set as load lock chambers and the second state where the additional processing device (110A) is set so as to perform atmospheric pressure processing and the second buffer chambers (74) are set as load lock chambers.