II−VI COMPOUND SEMICONDUCTOR CRYSTAL AND PHOTO−ELECTRIC CONVERSION FUNCTION ELEMENT

摘要

A ZnTe compound semiconductor crystal comprising, formed on a ZnTe compound semiconductor layer, a super−lattice layer formed by layering n−type CdSe and n−type ZnTe or an n−type contact layer containing ZnCdSeTe composition gradient layer, whereby it is possible to increase the carrier concentration of the n−type contact layer and control a conduction type comparatively easily. A CdSe/ZnTe super−lattice layer or a ZnCdSeTe composition gradient layer formed between the contact layer and an electrode can restrict an increase, due to band gap difference, in resistance. In addition, the lattice constants of CdSe and ZnTe forming the CdSe/ZnTe super−lattice layer or the ZnCdSeTe composition gradient layer are almost equal to each other, thus resulting in a low possibility of adversely affecting the crystallinity of a semiconductor crystal and providing a high−quality semiconductor crystal.