Semiconductor optical device and method of manufacturing the same

摘要

A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure. The electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the second crystallographic orientation which is formed in the process of growing the semi-insulating semiconductor crystal is substantially equal to or higher than the electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the first crystallographic orientation wherein the second crystallographic orientation is different from the first crystallographic orientation. An integrated light source and a method of manufacturing a semiconductor optical device are also disclosed. <IMAGE>