| 摘要 |
PURPOSE: A metal ion sputtering chamber using Cs is provided to activate the ionization of a thin film material and change ionization energy by using Cs. CONSTITUTION: A target device includes a target(110) having a thin film material and a target power source(111) as the first power source. A shield portion(120) is located around the target(110). Cesium is supplied to the shield portion(120) in order to activate the thin film material. A shield power(125) is applied to control the bias of the shield portion(120). A cesium reservoir(130) is used for supplying the cesium. The cesium is heated within the cesium reservoir(130). The vaporized cesium is provided to an upper portion of the target(110). A liquid source is prepared within the target(110). A mesh device is located at an upper portion of the shield portion(120). The mesh device is formed with a mesh grid(140) and a mesh bias(141). A grid supporter(142) is used for supporting the mesh grid(140). A substrate supporter(150) is used for supporting a substrate(20). A substrate power source(151) is connected with the substrate supporter(150). A load locker(160) and a vacuum pump(170) are located at a side portion of the chamber.
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