| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of crystal defects of a substrate formed from a nitride semiconductor and to provide the nitride semiconductor substrate having excellent crystallinity, where the nitride semiconductor is used as a light-emitting-element such as a light-emitting diode or a laser diode or as a light receiving element such as a solar battery or a photosensor. SOLUTION: A striped or lattice-like protective film is partially formed on a supporting substrate, and a first nitride semiconductor is grown from an exposed part of the supporting substrate of the protective film in the lateral direction in such a manner that the protective film is not covered completely. Then, the protective film is removed so as to form a space at the lower part of the first nitride semiconductor. Thereafter, a second nitride semiconductor is grown from the upper surface or from the upper surface and the side face being a growth part in the lateral direction of the first nitride semiconductor and further, a third nitride semiconductor in grown on the second nitride semiconductor, and finally, the supporting substrate is removed. |
