发明名称 Spatially redundant and complementary semiconductor device-based, single event transient-resistant linear amplifier circuit architecture
摘要 A spatial and complementary polarity device redundancy-based analog circuit architecture mitigates against single event transients. At least one and preferably multiple redundant spatially separate copies of the complementary device-configured analog circuit (such as a voltage reference or an operational amplifier) are coupled in parallel to the circuit's output node, via a complementary polarity device path. The parallel inputs to the multiple spaced apart devices make the likelihood of a single particle passing through multiple circuits at the same time extremely remote, so that the intended value of the electrical parameter will be sustained by either the given circuit itself or any circuit copy at which the upset event does not occur.
申请公布号 US6525590(B2) 申请公布日期 2003.02.25
申请号 US20010996448 申请日期 2001.11.28
申请人 INTERSIL AMERICAS INC. 发明人 SWONGER JAMES W.
分类号 H03F1/52;(IPC1-7):H03K17/62 主分类号 H03F1/52
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