发明名称 |
Method for fabricating semiconductor memory device |
摘要 |
A semiconductor memory device is provided which prevents a lifting phenomenon by improving an adhesive strength between an upper electrode and an interlayer insulating layer. The semiconductor memory device includes a capacitor formed on a semiconductor substrate, wherein the capacitor includes a lower electrode, a dielectric layer and an upper electrode; an adhesion layer formed on the upper electrode; an interlayer insulating layer covering the capacitor, wherein a portion of the interlayer insulating layer is in contact with the adhesion layer; and a contact hole, formed within the interlayer insulating layer, whose bottom exposes the upper electrode and whose sidewalls expose the interlayer insulating layer and the adhesion layer.
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申请公布号 |
US6524868(B2) |
申请公布日期 |
2003.02.25 |
申请号 |
US20010892537 |
申请日期 |
2001.06.28 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHOI EUN-SEOK;YEOM SEUNG-JIN |
分类号 |
H01L27/105;H01L21/02;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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