| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector which reduces the ratio of recoupling photocarriers generated on a semiconductor surface by received light and having high photosensitivity to a light of short wavelength, whose penetration length from a light receiving surface is short, and a light receiver using it. SOLUTION: In the photodetector 10 provided with a silicon substrate (first conductivity-type semiconductor layer) 1 and an N-type impurity diffusion layer (second conductivity-type impurity diffusion layer) 2 formed on the silicon substrate 1, the impurity density on the surface of the N-type impurity diffusion layer 2 is turned to be <=1×10<19> atoms/cm<3> . Thus, even if there is incidence of the light of the short wavelength generating the photocarriers near the surface of the N-type impurity diffusion layer 2, the recombination of the generated optical carriers near the surface of the N-type impurity diffusion layer 2 is reduced, the photocarriers efficiently reach a joining part and contribute to a photoelectric current, and thus the decline of the photosensitivity is prevented.
|
