MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DESIGN METHOD OF MASK PATTERN, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for more appropriately measuring the thickness of a polished and planarized insulating film, a design method of a mask pattern for exposure used for the manufacturing method, and a program for the design method. SOLUTION: A pattern, such as a transistor for DRAMs, is formed in a chip region 121 on a silicon substrate 101, and first and second CMP monitor patterns 127B and 127C are formed in a scribe region 124. Then, a PSG film 112 is formed in the chip and scribe regions 121 and 124. Furthermore, the first and second CMP monitor patterns 127B and 127C are used for controlling thicknesses TH1 and TH2 of the PSG film 112, and at the same time, planarization polishing is conducted through CMP polishing. A DRAM region 122 is included in the chip region 121, the first CMP monitor pattern 127B is formed near the DRAM region, and the second CMP monitor pattern 127C is formed apart form the DRAM region.