METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a TFT which has flat surface for a semiconductor film and has a low off-state current value and has suppressed variations, and also to provide an electronic apparatus provided with the same. SOLUTION: A basic insulation film 11 and an amorphous semiconductor film 12 are formed at nearly the same film-forming temperature, and the obtained amorphous semiconductor film is irradiated with a first laser light to be crystallized. To improve the planarity of the semiconductor film, a second laser light is irradiated in vacuum, eliminating fine holes which has been generated by the irradiation of a laser light in a vacuum, and thereby obtaining a high-quality surface for the semiconductor film.