发明名称 APPARATUS FOR HIGH-TEMPERATURE HIGH-PRESSURE TREATMENT ON SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for treatment on semiconductor wafers, capable of surely reducing particles and metal contamination. SOLUTION: This apparatus comprises a pressure vessel 2, having an opening for inputting and outputting wafers 9 to and from a treatment chamber 5, a lid 4 for opening and closing the opening, a sealing member 4A for sealing the interface between the lid 4 and the pressure vessel 2 for keeping the pressure, and an isolation means 12 for isolating the treatment chamber 5 from the gas flow channel of the sealing member 4A side.
申请公布号 JP2003051461(A) 申请公布日期 2003.02.21
申请号 JP20010236857 申请日期 2001.08.03
申请人 KOBE STEEL LTD 发明人 SAKASHITA YOSHIHIKO;KANDA TAKESHI;INOUE YOICHI;ISHII TAKAHIKO
分类号 H01L21/285;(IPC1-7):H01L21/285 主分类号 H01L21/285
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