| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a thin film by growth of an atom layer, which enables increase in difference in growth speed which depends on crystal orientation, and to eliminate the generation of an abnormal growth and which enables to improve a shape controllability than the conventional method. SOLUTION: A concave part is formed in a substrate 3 by etching, and then the substrate 3 is placed on a susceptor 2 in a vacuum vessel 1 to be heated to a predetermined temperature by a lamp 4. Valves 7 are opened and closed, to supply a material gas alternately from these valves to form a thin film in the concave part of the substrate by growing an atom layer, and a quantum fine wire and a quantum dot are formed.
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