Phasenverschiebungsmaske und Verfahren zur Herstellung einer solchen Maske

摘要

A silicon nitride film (3) and a silicon oxide film (5) are deposited on a transparent substrate 1 to cover a first light transmitting region (Ta) and to expose a second light transmitting region (Tn). A light blocking film (7) is formed in a light blocking region (S) sandwiched between the first and the second light transmitting regions Ta and Tn to cover the transparent substrate 1. A phase shift mask, a blank for a phase shift mask, and a method of manufacturing a phase shift mask are accordingly obtained in which the phase difference of the light transmitted through the light transmitting regions adjacent to each other with the light blocking film interposed is substantially 180 DEG and the intensity of each transmitting light is identical.