TRENCH CAPACITOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A trench capacitor and a method for fabricating the same are provided to increase capacitance of the trench capacitor without increasing an area of the trench capacitor. CONSTITUTION: A stacked layer(205) is formed by depositing a plurality of silicon layers(204) and inserting a silicon germanium layer(202) between the silicon layers(204). A trench(212) is formed by patterning the stacked layer(205). A capacitor dielectric(214) is formed on an inner wall of the trench(212). A storage node electrode(216) is formed on the inner wall of the trench(212). The storage node electrode(216) is formed by filling up a conductive material into a region surrounded by the capacitor dielectric(214). A concavo-convex portion is formed on the inner wall of the trench(216) by etching selectivity of the silicon layer(204) and the silicon germanium layer(202).