发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND CELLULAR TERMINAL USING THE SAME
摘要 A first control signal output from a power voltage evaluation circuit (12) controls power voltage of a power voltage generation circuit (11) so that the power voltage is reduced within a range where an internal circuit (14) operates normally. A second control signal output from a predetermined voltage sensing circuit (13) controls the power voltage of the power voltage generation circuit (11) so that the power voltage generated by the power voltage generation circuit (11) does not exceed a predetermined voltage. By performing control by the predetermined voltage sensing circuit (13) in addition to control of the power voltage by the power voltage evaluation circuit (12), it is possible to suppress excessive increase of the power voltage of the power voltage generation circuit (11) and prevent instability of the circuit operation and remarkable increase of current consumption. Thus, it is possible to provide a semiconductor integrated circuit device capable of reducing the power voltage as much as possible within a range where the internal circuit operates normally and suppressing increase of the gate current, thereby preventing instable operation of an MOS transistor circuit and increase of current consumption.
申请公布号 WO03014856(A1) 申请公布日期 2003.02.20
申请号 WO2002JP07888 申请日期 2002.08.02
申请人 SHARP KABUSHIKI KAISHA;TOYOYAMA, SHINJI 发明人 TOYOYAMA, SHINJI
分类号 H01L27/04;G05F3/24;H01L21/822;H01L27/02;(IPC1-7):G05F1/10 主分类号 H01L27/04
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