METHOD FOR FORMING METAL LINE

摘要

PURPOSE: A method for forming a metal line is provided to prevent over-etching of a mis-aligned line by forming a spacer on a sidewall of an upper metal line. CONSTITUTION: The first conductive layer pattern(110) is formed on a semiconductor substrate(100). An interlayer dielectric is formed on the entire surface of the semiconductor substrate(100) including the first conductive layer pattern(110). A predetermined region of the first conductive layer pattern(110) is exposed by forming a contact hole(130). The second conductive layer is formed on the interlayer dielectric. The second conductive layer is connected with the first conductive layer pattern(110) through the contact hole(130). The second conductive layer pattern(151) is formed by patterning the second conductive layer. A spacer(181) is formed on a sidewall of the second conductive layer pattern(151).