| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to simplify the manufacturing process without using a photo process for forming a storage node electrode. CONSTITUTION: A gate including a gate oxide layer(103), a gate polysilicon(104) and a cap oxide layer(105) is formed on a silicon substrate(101) with a field oxide layer(102). An oxide spacer(106) is formed at both sidewalls of the gate. A silicon nitride layer and the first oxide layer(107) are sequentially deposited and patterned. Then, the first polysilicon layer(109) as a storage node electrode is formed on the resultant structure. The first oxide layer is removed by wet-etching. Then, a nitride layer(110) and the second polysilicon layer as a plate electrode are formed on the resultant structure.
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