| 摘要 |
PURPOSE: A method for manufacturing a MOS transistor is provided to reduce power consumption by reducing leakage current under off-state and to improve stability by reducing breakdown voltage. CONSTITUTION: A surface oxide layer(2) and a nitride layer are sequentially deposited on a silicon substrate(1). The nitride layer and the oxide layer are selectively etched. The exposed substrate is etched to form a trench by using the oxide pattern as a mask. After rising the temperature of the resultant structure, a silicon carbide(5) is deposited on the trench under hydrogen atmosphere. The remaining oxide layer is entirely removed. Then, a transistor is formed on the resultant structure.
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