| 摘要 |
PURPOSE: A thin film magnetic memory device provided with a plurality of memory cells having magnetic tunnel junction is provided to not complicate a manufacturing process, have simple magnetization characteristics and assure a sufficient operation margin. CONSTITUTION: A thin film magnetic memory device(1) provided with a plurality of memory cells having magnetic tunnel junction includes a control circuit(5) for controlling the overall operation of MRAM device(1) in response to control signal CMD, and a memory array(10) having a plurality of MTJ memory cells arranged in a matrix. In memory array(10), a plurality of write word lines WWW and a plurality of read word lines RWL are arranged respectively corresponding to the MTJ memory cell rows. Bit lines BL and source lines SL are arranged respectively corresponding to the MTJ memory cell columns. The structure of memory array(10) is specifically described later. MRAM device(1) further includes a row decoder(20), a column decoder(25), a word line driver(30), a word line current control circuit(40) and read/write control circuits(50,60). The MRAM device(1) conducts random access in response to an external control signal CMD and an external address signal(ADD) in order to receive write data(DIN) and output read data(DOUT).
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