| 发明名称 |
WAFER PROCESSING APPARATUS, WAFER PROCESSING METHOD, AND SEMICONDUCTOR SUBSTRATE FABRICATION METHOD |
| 摘要 |
An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely dipped into the wafer processing bath (10) and rotated by wafer rotating rods (53).
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| 申请公布号 |
CA2229975(C) |
申请公布日期 |
2003.02.18 |
| 申请号 |
CA19982229975 |
申请日期 |
1998.02.18 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
UEHARA, FUMIO;HARADA, MASAKAZU;YANAGITA, KAZUTAKA;SAKAGUCHI, KIYOFUMI |
| 分类号 |
H01L21/304;B08B3/10;B08B3/12;H01L21/00;H01L21/20;H01L21/306;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/304 |
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