FERROELECTRIC MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device is provided to recover ferroelectric deterioration of a capacitor ferroelectric layer by performing a post-treatment process, and to prevent an operation error caused by an increase of contact interfacial resistance of the ferroelectric memory device by avoiding oxidation of an adhesive layer pattern between a capacitor lower electrode and a contact plug. CONSTITUTION: The ferroelectric memory device has a cell capacitor pattern in which the adhesive layer pattern(30), a lower electrode, a ferroelectric layer pattern(50) and an upper electrode(60) are sequentially formed. An oxygen barrier pattern(70) is so formed to cover only the sidewall of the cell capacitor pattern under the interface between the lower electrode and the ferroelectric layer pattern.