| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of lowering the contact resistance of a gate diffusion layer and a gate electrode and realizing a high- speed operation, and a manufacturing method. SOLUTION: The surface of the gate diffusion layer 24 and a metal layer as the gate electrode 25 in a high electron mobility transistor are made into an alloy. Thus, compared to the case that the surface of the gate diffusion layer 24 and the metal layer as the gate electrode 25 are simply in contact, the contact resistance of the gate diffusion layer 24 and the gate electrode 25 is low and the high-speed operation is realized. |
