发明名称 COPPER COMPOSITE MATERIAL HEAT-RADIATING BOARD, SEMICONDUCTOR POWER MODULE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a heat radiation board and a semiconductor power module, using the heat radiation board having simple manufacture and high reliability. SOLUTION: A die, formed with a fine curve (warpage) of several ten to several hundred microns is filled with a copper composite material mix powder and is pressed at a high pressure, and preliminary molding (preform), in the shape of the heat radiation board for semiconductor power element, is formed. The preliminary molding is sintered in an inert atmosphere, and the sintered molding 1 for the heat-radiating board of the semiconductor power element contracted in the range of 5 to 15% of a volume contraction rate is obtained from the preliminary molding. Thus, the copper compound material heat- radiating board for semiconductor power element is manufactured by 'Near Net Shaping technology' using powder metallurgical manufacturing method for bonding the ceramic insulating board 8 of the semiconductor power element to the surface via a metal plate 7 and a wax material 6, without mechanically working the sintered molding.
申请公布号 JP2003046032(A) 申请公布日期 2003.02.14
申请号 JP20010226128 申请日期 2001.07.26
申请人 HITACHI LTD;HITACHI CABLE LTD 发明人 SUZUKI KIYOMITSU;KONDO YASUO;WATABE NORIYUKI
分类号 B22F3/02;B22F3/10;B22F7/08;H01L23/14;H01L25/07;H01L25/18;(IPC1-7):H01L23/14 主分类号 B22F3/02
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