PRECHARGE SIGNAL GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME

摘要

PURPOSE: A precharge signal generating circuit and semiconductor memory device comprising the same is provided to enable a precharge operation to be carried out effectively when a write operation is again performed without address change. CONSTITUTION: A precharge circuit in an input/output multiplexor(15) precharges input/output lines and data input/output lines(IO1,IOB1,IO2,IOB2,DIO,DIOB) in response to activation of precharge and memory block select signals(PC,BS). A precharge signal generating circuit(20) generates a precharge signal(PC) in response to a control signal(ATD) from an address transition detecting circuit(30) and a write control signal(WR). The address transition detecting circuit(30) generates the control signal(ATD) in response to variation of an address(ADDR).