| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride based III-V compound semiconductor device capable of being manufactured while keeping a growth temperature fixed. SOLUTION: The nitride based III-V compound semiconductor device is manufactured by using a nitride based III-V compound semiconductor containing gadolinium(Gd). For instance, GaGdN manufactured by adding Gd to GaN can be grown at the same temperature as GaN or AlGaN and a band gap is reduced more than GaN. Thus, in the case of manufacturing a heterojunction field-effect transistor, a light emitting diode or a laser diode or the like by using GaN and AlGaN, by using GaGdN containing Gd, a crystal is grown in the state of keeping a substrate temperature fixed, and the nitride based III-V compound semiconductor device is manufactured without lowering the performance. |
