发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR TESTING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which malfunction never be caused and operation can be performed with low power consumption by performing a test again and detecting optimum operation conditions for a cell being easy to be defect out of cells passing a test, and a method for testing the same. SOLUTION: This device is provided with a memory cell array provided with memory cells decided as defect and repaired as a consequence of a first test and test cells decided as memory cells being easy to be defect most out of memory cells decided as passing the test and repaired, a test means by which a second test is performed with operation conditions previously set for the test cell, the operation conditions are adjusted for the test cell in accordance with a result of the second test, the second test is performed repeatedly, or the operation conditions adjusted finally are outputted, and a driving means for driving the memory cell array with operation conditions outputted from the test means.
申请公布号 JP2003045197(A) 申请公布日期 2003.02.14
申请号 JP20020141266 申请日期 2002.05.16
申请人 HYNIX SEMICONDUCTOR INC 发明人 HONG SANG-HOON;KIM SI HONG
分类号 G01R31/28;G11C11/401;G11C29/00;G11C29/14;G11C29/44;G11C29/50;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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