PROCEDE DE REALISATION D'UNE GRILLE METALLIQUE ENTERREE DANS UNE STRUCTURE EN MATERIAU SEMICONDUCTEUR

摘要

Manufacture of a semiconductor device includes forming a metal grid in a semiconductor substrate by using a mask to form openings, depositing a metal layer and removing the mask and metal formed on it. A layer that does not nucleate or spread is applied to the grid and then a semiconductor material is grown epitaxially across the substrate. Both semiconductor materials may be gallium nitride. The layer on top of the grid may be formed by oxidizing, or nitriding the metal or by encapsulating the metal in dielectric. The epitaxial growth takes place /- 800 deg C.