| 摘要 |
PROBLEM TO BE SOLVED: To implement a very reliable semiconductor device which are free from breaks in a substrate and wirings, and the like, which tend to occur in the vicinity of a via hole formed on a compound semiconductor substrate, and has improved manufacturing yield. SOLUTION: An Au electrode 2 which is made by pattering an Au film formed by plating method is formed on the surface of the compound semiconductor substrate comprising GaAs and the like, and a wiring 4 is formed on a rear area including the inside of a via hole 3 which is formed from the rear side of the semiconductor substrate 1 such that it exposes one portion of the surface of the Au electrode 2. The wiring 4 is an Au wiring formed by plating method, and is designed to comprise a first wiring layer 11 of a low hardness and a second wiring layer of a high hardness.
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