| 摘要 |
PROBLEM TO BE SOLVED: To solve the conventional problem of a highly-doped region formed being deeper at the periphery and in each cell than in a channel region for stabilizing the voltage of a substrate, which causes increase in the length of a channel layer and width between cells, resulting in the limitations on the reduction of an on-state resistance. SOLUTION: By forming a high density region only at the periphery but not in each cell, and deeper than in the channel region, the lateral expansion of the channel region of each cell is reduced and thereby increase the concentration of cells. Since the stabilization of voltage of a substrate can be realized by the highly-doped, region formed at the periphery, an on-state resistance can be reduced to about half that of the N-channel, without decreasing the breakdown voltage.
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