发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes a first semiconductor chip provided with a first electrode on a first main surface and a second semiconductor chip provided with a second electrode on a second main surface. The first and the second semiconductor chips are integrated so that the first and second main surfaces are opposed to one another and the first and second electrodes are electrically connected. The second semiconductor chip is polished from the opposite side of the second main surface so that the second semiconductor chip has a thickness smaller than the thickness of the first semiconductor chip.
申请公布号 US2003032216(A1) 申请公布日期 2003.02.13
申请号 US20020062535 申请日期 2002.02.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKAOKA YUKIKO;MATSUMURA KAZUHIKO;KANEKO HIDEYUKI;NAGAO KOICHI;FUJIMOTO HIROAKI
分类号 H01L25/18;H01L21/56;H01L21/60;H01L21/98;H01L23/12;H01L23/495;H01L25/065;H01L25/07;H01L29/06;(IPC1-7):H01L21/48 主分类号 H01L25/18
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