| 摘要 |
<p>A method of forming a semiconductor substrate having a plurality of epitaxial regions disposed at different lateral locations, includes assembling a plurality of epitaxial layers (505, 510, 515, 520) vertically adjacent to each other on a host substrate (500) to form an epitaxial structure; etching a surface of the epitaxial structure to reveal epitaxial regions of the epitaxial layers at different lateral locations on the host substrate (500); and wafer bonding the etched surface of the epitaxial structure to a transfer substrate (550).</p> |
