发明名称 |
SEMICONDUCTOR STRUCTURE FOR USE WITH HIGH-FREQUENCY SIGNALS |
摘要 |
High quality epitaxial layers of different compound semiconductor materials (237, 239) can be grown overlying regions (231, 232) of large silicon wafers (235) by first growing accommodating buffer layers (236, 238). The accommodating buffer layers is are layers of monocrystalline oxide spaced apart from the silicon wafer by amorphous interface layers (253, 234) of silicon oxide, which dissipates stain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Various circuits (242, 247) can be formed in the epitaxial layers which may be in communication with circuits (241) in the substrate. These structures have application involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems and automotive navigations systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges automobiles. |
申请公布号 |
WO0209150(A3) |
申请公布日期 |
2003.02.13 |
申请号 |
WO2001US22573 |
申请日期 |
2001.07.18 |
申请人 |
MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE |
发明人 |
EL-ZEIN, NADA;RAMDANI, JAMAL;EISENBEISER, KURT;DROOPAD, RAVINDRANATH |
分类号 |
C30B25/18;H01L21/20;H01L21/316 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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