| 摘要 |
<p>Reverse bias protection for a solar cell is provided with a diode on the solar cell. In one embodiment, the Schottky diode is formed at the interface between a metallic diode contact and a semiconductor substrate on which the solar cell is grown. The solar cell includes a Ge substrate, which may further include a photoactive junction. In one embodiment, the Schottky diode is provided in a trough or recess extending through the solar cell layers to the front surface of the substrate. In this embodiment, the Schottky diode is electrically connected across some or all of the cells of the solar cell structure with a jumper bar or other suitable interconnect. In another embodiment, the Schottky diode is provided on a back surface of the substrate, with a C-clamp interconnecting at least one solar cell contact to the diode contact.</p> |
