| 摘要 |
A bipolar transistor has a first conductivity type semiconductor substrate (1), a first conductivity type collector layer (2) with an impurity concentration lower than that of the semiconductor substrate (1), which is formed on the semiconductor substrate (1), a second conductivity type base layer (3) formed on the collector layer (2), a first conductivity type emitter layer (4) formed on the base layer (3), and a conductive film (8) covering the side faces of the collector layer (2) and the base layer (3). Since the conductive film (8) covering the side faces of the collector layer (2) and the base layer (3) is provided, the electric field concentration near the side faces of the collector layer (2) and the base layer (3) is relaxed, so that the withstand voltage of transistor can be increased. Also, the thickness of the collector layer (2) is decreased, so that the current amplification factor can be enhanced.
|
