| 摘要 |
PROBLEM TO BE SOLVED: To provide a guidance method and an apparatus for controlling oxygen concentration in a silicon single crystal when pulling up the crystal from molten silicon liquid by the CZ method. SOLUTION: The oxygen concentration in the crystal is controlled by controlling crucible revolution, flow rate of inert gas, intra-furnace pressure, and molten liquid level, etc., when pulling up the single crystal. The reliability on applying profile of operation to real device, i.e., by self estimation of reliability of the guidance, the guidance of operational profile and reliability or evaluation of reliability is presented.
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