发明名称 Semiconductor integrated circuit device
摘要 A semiconductor device includes memory cells of one-transistor one-capacitor connected to n+1 bit lines that are simultaneously driven, sense amplifiers connected to the n+1 bit lines, and a reference voltage generating circuit generates an average voltage of a highest voltage and a lowest voltage among bit line voltages that are obtained by accessing the n+1 bit lines in parallel, and supplying the average voltage to the sense amplifiers as a reference voltage.
申请公布号 US2003031059(A1) 申请公布日期 2003.02.13
申请号 US20020272998 申请日期 2002.10.18
申请人 FUJITSU LIMITED 发明人 ENDO TORU;KAWASHIMA SHOICHIRO
分类号 G11C14/00;G11C5/14;G11C7/14;G11C11/22;H01L21/822;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;(IPC1-7):G11C5/14 主分类号 G11C14/00
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