发明名称 |
Device isolation process flow for ARS system |
摘要 |
A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.
|
申请公布号 |
US2003032290(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020264569 |
申请日期 |
2002.10.03 |
申请人 |
LEE HEON;YANG CHUNG-CHING;HARTWELL PETER |
发明人 |
LEE HEON;YANG CHUNG-CHING;HARTWELL PETER |
分类号 |
B82B3/00;G11B9/00;G11B9/14;H01L21/764;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
B82B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|