| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the resistance between the electrode of a semiconductor device and the electrode of a testing substrate and suppress and adverse effect due to high frequency current and voltage. SOLUTION: When testing the electric characteristics of a semiconductor device, an electrode formed in the semiconductor device is brought into contact with the recess 5b of a pin 5 to energize the semiconductor device to the testing substrate 9 side. The pin 5 is pushed to the testing substrate 9 side and the slope 5a side of the pin 5 and the slope 7a side of a pin 7 are moved in the directions mutually opposed and to the side widening the inner diameter of the metal plate 3. The metal plate 3 is widened with elasticity. As the pin 5 and the pin 7 directly contact at the slopes 5a and 5b, the electrodes of the semiconductor device electrically contact the electrode 11 of the testing substrate 9 at a shortest distance.
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