Manufacturing method for dynamic random-access memory element with formation of memory cell field and control and evalaution circuit in vertically overlapping surface regions

摘要

The manufacturing method uses semiconductor technology for provision of at least one capacitor and transistor for a memory cell of a memory cell field (31), together with a control and evaluation circuit (21), positioned vertically above the memory cells of the memory cell field. The memory cell field and the control and evaluation circuit are incorporated in respective overlapping surface regions (2,3) which are at least partially coupled together. An Independent claim for a dynamic random-access memory element is also included.