A distributed bragg reflector semiconductor laser

摘要

A semiconductor device for providing a light source suitable for use as a pumping light source in a Raman amplification system. The device includes a light reflecting facet positioned on a first side of the semiconductor device, a light emitting facet positioned on a second side of the semiconductor device thereby forming a resonator between the light reflecting facet and the light emitting facet. An active layer configured to radiate light in the presence of an injection current is positioned within the resonator along a portion of the resonator length, and a wavepath layer is positioned adjacent to the active layer within a remaining portion of the resonator length. The wavepath layer includes a diffraction grating configured to select a spectrum of light including multiple longitudinal modes. <IMAGE>