| 摘要 |
PURPOSE: A high voltage generating circuit is provided to be capable of increasing a boosting capacity without increasing a boosting capacity of a boosting capacitor. CONSTITUTION: A control signal generating means(20,22,24,26,28,NA1NA4,NOR3,14,16,I1-I8) generates the first to fifth control signals in response to an enable pulse signal. The first precharge and boost means(NC1,N1) precharges the first node in response to the first control signal at the first precharge operation, and boosts the first node in response to an inverted version of the first control signal at the first boost and the second precharge operation. The first precharge means(NC2,N2) boosts and precharges the second node in response to the second control signal at the first precharge operation. The first boost means(NC3) boosts a precharge node in response to the third control signal at the first boost operation. The second boost means(NC4) boosts a boost node in response to the fourth control signal at the second boost and the second precharge operation. The second precharge and boost means(NC5,N6) precharges the high voltage generation control node in response to the fifth control signal at the first precharge, the first boost and the second precharge operation, and boosts the high voltage generation control node in response to an inverted version of the fifth control signal at the second boost operation. The second precharge means(NC3',N4) precharges the precharge node in response to a signal of the high voltage generation control node at the second boost operation. The third precharge means precharges the boost node in response to a signal of the second node at the first precharge operation. The first charge transfer means(N5) transfers charges between the precharge node and the boost node in response to a signal of the first node at the first boost and the second precharge operation. The second charge transfer means(N7) transfers charges between the boost node and the high voltage generation control node in response to a signal of the high voltage generation control node at the second boost operation.
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