| 摘要 |
PURPOSE: A method for forming a spacer in semiconductor devices is provided to be capable of easily obtaining a sloped gate electrode profile by using CHF3 and O2 gas, thereby preventing misalignment and bridge. CONSTITUTION: A gate electrode which is sequentially stacked on a polysilicon layer(30), a metal film(32), an oxide layer(34) and a nitride hard mask(36) is formed on a semiconductor substrate. After depositing an HLD layer on the gate electrode, a spacer(38) is formed at both sidewalls of the gate electrode by selectively etching the HLD layer at low pressure of 30-80 mTorr. At this time, the top plane of the nitride hard mask(36) is simultaneously etched with tilt. CHF3 and O2 gas are used as an etching gas.
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