| 发明名称 |
SEMICONDUCTOR MANUFACTURING DEVICE, AND CLEANING METHOD THEREFOR |
| 摘要 |
PURPOSE: To effectively remove a ruthenium film, an osmium film, and oxides thereof deposited or adhered inside a semiconductor treatment device. CONSTITUTION: Reaction products deposited or adhered inside the device are rapidly and effectively removed by individually using an oxygen atom donating gas and a halogen gas and feeding the gases inside the device. The device can be stably operated, a thin film of high quality can be formed, and a semiconductor element can be produced in high yield.
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| 申请公布号 |
KR20030011568(A) |
申请公布日期 |
2003.02.11 |
| 申请号 |
KR20020042838 |
申请日期 |
2002.07.22 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI, CO., LTD. |
发明人 |
ARAI TOSHIYUKI;ITAYA HIDEHARU;NAKAHARA MIWAKO;OHOKA TSUKASA;SAKUMA HARUNOBU;SANO ATSUSHI;YAMAMOTO SATOSHI |
| 分类号 |
C23C16/18;C23C16/40;C23C16/44;C23C16/455;C23F1/12;H01L21/02;H01L21/205;H01L21/28;H01L21/285;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
C23C16/18 |
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