Etching and cleaning apparatus

摘要

In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, and high-frequency power is supplied to both of the substrate electrode 7 and the voltage monitoring conductor 11. Completion of etching operation is detected by monitoring a self-biasing potential generated in this voltage-monitoring conductor 11.