发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE: To rewrite data of one part of data read of one page portion read from a memory cell array and to write the result in a different page. CONSTITUTION: Data read, from a memory cell MC of one page in one block BL of a memory cell array, are held in a data-holding circuit 12. The data- holding circuit 12 has a plurality of latch circuits 24; in these plurality of latch circuits 24, addresses are specified for the latch circuits 24 by a column address. Then data for rewriting is supplied to the latch circuits 24, in which an address is specified by a column address, and rewrite of data is conducted by holding data by the latch circuit 24. Data corresponding to one page, after data rewrite is written in a page, in the memory cell array corresponding to a page address (row address).
申请公布号 KR20030011542(A) 申请公布日期 2003.02.11
申请号 KR20020041606 申请日期 2002.07.16
申请人 发明人
分类号 G11C16/02;G06F12/00;G06F12/04;G11C11/34;G11C16/04;G11C16/06;G11C16/10;H01L27/115;(IPC1-7):G11C11/34 主分类号 G11C16/02
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