| 摘要 |
A conductive film for gate electrode including a polysilicon film is deposited on a semiconductor substrate, and patterned to form gate electrodes. An oxide film is formed on each side face of at least the polysilicon film, and by nitriding at least the surface portion of the oxide film, a nitride oxide film is formed on each side face of the gate electrodes. An interlayer insulating film is then deposited, and contact holes are formed through the interlayer insulating film. The existence of the nitride oxide film suppresses variation and reduction in size due to oxidation and etching of the gate side faces during resist removal and washing.
|
