METHOD FOR PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method for plasma-etching a semiconductor substrate capable of sufficiently obtaining an etching rate in trench working and an improvement in yield. SOLUTION: The method for plasma-etching the semiconductor substrate comprises the steps of cooling a sample base 6 in a vacuum container 1 by a temperature controller 11, setting a temperature of a sample 7 made of a silicon substrate to a low temperature of 0 deg.C or lower, then plasma-etching the sample 7 by using etching gas containing an SF6 as a main component and adding O2 thereto, and trench-working the sample 7.